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© 2017. This work is licensed under https://creativecommons.org/licenses/by-nc/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and for reducing undesirable ion reactions in sample solutions. The ISFET biosensor with surface-modified GOL shows significantly reduced sensing signal error compared with an ISFET with bare GOL in both diluted and undiluted phosphate buffered saline solutions.

Details

Title
A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
Author
Hyun Woo Son; Jeun, Minhong; Choi, Jaewon; Kwan Hyi Lee
Pages
2951-2956
Section
Original Research
Publication year
2017
Publication date
2017
Publisher
Taylor & Francis Ltd.
ISSN
1176-9114
e-ISSN
1178-2013
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2239161370
Copyright
© 2017. This work is licensed under https://creativecommons.org/licenses/by-nc/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.