Abstract

Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

Details

Title
Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
Author
Sablon, KA 1 ; Wang, Zh M 1 ; Salamo, GJ 1 ; Zhou, Lin 2 ; Smith, David J 2 

1  University of Arkansas, Institute of Nanoscale Science and Engineering, Fayetteville, USA (GRID:grid.411017.2) (ISNI:0000000121510999) 
2  Arizona State University, Department of Physics, Tempe, USA (GRID:grid.215654.1) (ISNI:0000000121512636) 
Pages
530
Publication year
2008
Publication date
Dec 2008
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1007/s11671-008-9194-5
ProQuest document ID
2787072572
Copyright
© to the authors 2008. This work is published under http://creativecommons.org/licenses/by/2/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.