Real Structure and Lattice Parameters of Silicon Carbide: The Influence of Growth Direction, Doping and Temperature - ProQuest

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Real Structure and Lattice Parameters of Silicon Carbide: The Influence of Growth Direction, Doping and Temperature

Stockmeier, Matthias. Friedrich-Alexander-Universitaet Erlangen-Nuernberg (Germany) ProQuest Dissertations & Theses, 2008. 28476761.